Diode-pumped passively mode-locked 1342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber

被引：24
作者：
Huang, S. C. [1 ]
Cheng, H. L. [1 ]
Chen, Yi-Fan [1 ]
Su, K. W. [1 ]
Chen, Y. F. [1 ]
Huang, K. F. [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
来源：
OPTICS LETTERS | 2009年 / 34卷 / 15期
关键词：
MOLECULAR-BEAM EPITAXY; ND-YLF LASERS; ND-YVO4; LASER; FIBER LASER; MU-M; INP; PERFORMANCE; CRYSTAL; GAINNAS; MIRRORS;
D O I：
10.1364/OL.34.002348
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated. (C) 2009 Optical Society of America
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收藏
页码：2348 / 2350
页数：3
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