Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification

被引：3

作者：

Habersat, Daniel B. ^{[1
]}

Lelis, Aivars J. ^{[1
]}

Green, Ronald ^{[1
]}

机构：

[1] US Army, Opt & Power Devices Branch, CCDC Army Res Lab, Adelphi, MD 20783 USA

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

关键词：

Silicon Carbide; MOSFET; threshold voltage; bias temperature stress (BTS); qualification standards; test methods; high temperature gate bias (HTGB); INSTABILITY;

D O I：

10.1109/irps45951.2020.9128227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold voltage hysteresis seen in SiC MOSFETs complicates the direct use of qualification standards such as AEC-Q101 for high-temperature gate-bias effects. We review approaches that are appropriate for use in a production environment and can accommodate this effect, comparing their efficacy. Our findings show that in situ hysteresis measurements can be nearly as effective as those made ex situ, and that threshold instability in modern SiC MOSFETs is more performance matter than reliability problem.

引用

页数：4

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