Synthesis, Raman scattering and defects of β-Ga2O3 nanorods

被引：142
作者：
Gao, YH
Bando, Y
Sato, T
Zhang, YF
Gao, XQ
机构：
[1] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] NIMS, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan
[3] Wuhan Techtop Satellite Technol Corp LTD, Wuhan 430079, Hubei, Peoples R China
[4] Wuhan Univ, Wuhan 430079, Hubei, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 12期
关键词：
D O I：
10.1063/1.1507835
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Large yield of beta-Ga2O3 nanorods with metal Ga tip were efficiently synthesized. They were deposited on surface of amorphous C fibers by decomposition of Ga2O vapor at around 1000 degreesC, where Ga2O vapor was produced at 1360 degreesC by a reaction between pure Ga2O3 and active carbon powders. The nanorods had diameters ranging from 10 to 100 nm and lengths of up to several tens micrometers. Twins and edge dislocations having a Burgers vector of 0.0859 Angstrom [2.66, 3.66, (1) over bar] existed in the nanorods. A redshift of 4-23 cm(-1) was found in the Raman scattering spectrum of nanorods compared with that of a pure Ga2O3 powder. This phenomenon was explained qualitatively in terms of the defects in the nanorods. (C) 2002 American Institute of Physics.
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页码：2267 / 2269
页数：3
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