Demonstration of solar-blind AlxGa1-xN-based heterojunction phototransistors

被引：30

作者：

Zhang, Lingxia ^{[1
]}

Tang, Shaoji ^{[1
]}

Liu, Changshan ^{[1
]}

Li, Bin ^{[1
]}

Wu, Hualong ^{[1
]}

Wang, Hailong ^{[1
]}

Wu, Zhisheng ^{[2
]}

Jiang, Hao ^{[2
,3
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[3] Sun Yat Sen Univ, Sch Microelect, Guangzhou 510275, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 23期

关键词：

MG; EFFICIENCY;

D O I：

10.1063/1.4937389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-mu m-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0V. A high optical gain of 1.9 x 10(3) was obtained at 6V bias. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 17 条

[1] Improved detection of the invisible [J].

Carrano, JC ;

Li, T ;

Grudowski, PA ;

Dupuis, RD ;

Campbell, JC .

IEEE CIRCUITS & DEVICES, 1999, 15 (05) :15-24

[2] High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping [J].

Chen, Yingda ;

Wu, Hualong ;

Han, Enze ;

Yue, Guanglong ;

Chen, Zimin ;

Wu, Zhisheng ;

Wang, Gang ;

Jiang, Hao .

APPLIED PHYSICS LETTERS, 2015, 106 (16)

[3] Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface [J].

Hashizume, T .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :431-436

[4] Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes [J].

Huang, Y. ;

Chen, D. J. ;

Lu, H. ;

Dong, K. X. ;

Zhang, R. ;

Zheng, Y. D. ;

Li, L. ;

Li, Z. H. .

APPLIED PHYSICS LETTERS, 2012, 101 (25)

[5] AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Multiplication Gain Using Back-Illuminated Structure [J].

Huang, Zeqiang ;

Li, Jianfei ;

Zhang, Wenle ;

Jiang, Hao .

APPLIED PHYSICS EXPRESS, 2013, 6 (05)

[6] Hole conductivity and compensation in epitaxial GaN:Mg layers [J].

Kaufmann, U ;

Schlotter, P ;

Obloh, H ;

Köhler, K ;

Maier, M .

PHYSICAL REVIEW B, 2000, 62 (16) :10867-10872

[7] Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices [J].

Kozodoy, P ;

Hansen, M ;

DenBaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1999, 74 (24) :3681-3683

[8] Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransitors with high optical gain and high rejection ratio [J].

Lee, M. L. ;

Sheu, J. K. ;

Shu, Yung-Ru .

APPLIED PHYSICS LETTERS, 2008, 92 (05)

[9] High quantum efficiency AlGaN solar-blind p-i-n photodiodes [J].

McClintock, R ;

Yasan, A ;

Mayes, K ;

Shiell, D ;

Darvish, SR ;

Kung, P ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2004, 84 (08) :1248-1250

[10] Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistor grown on low-temperature AlN interlayer [J].

Mouillet, R ;

Hirano, A ;

Iwaya, M ;

Detchprohm, T ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (5B) :L498-L501

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