Stress mapping of chemical-vapor-deposited diamond film surface by micro-Raman spectroscopy

被引：32

作者：

Vlasov, II ^{[1
]}

Ralchenko, VG ^{[1
]}

Obraztsova, ED ^{[1
]}

Smolin, AA ^{[1
]}

Konov, VI ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST GEN PHYS,MOSCOW 117942,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 13期

关键词：

D O I：

10.1063/1.119399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A confocal Raman spectroscopy was used to measure intrinsic stress distribution on the growth surface within individual grains of chemical-vapor-deposited diamond film. Polarization analysis of the Raman line shape revealed that even in high quality (2.8 cm(-1) linewidth), free-standing film of 0.6 mm thickness, small regions exist where high local stresses (both compressive and tensile) develop. The stressed regions tend to appear near crystal edges and grain boundaries. A strong gradient in defect or impurity concentrations is supposed to cause the stress fluctuations observed. (C) 1997 American Institute of Physics.

引用

页码：1789 / 1791

页数：3

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