Silver incorporation in Ge-Se glasses used in programmable metallization cell devices

被引:133
|
作者
Mitkova, M [1 ]
Kozicki, MN [1 ]
机构
[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
关键词
D O I
10.1016/S0022-3093(01)01068-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate the nature of thin films formed by the photodissolution of Ag into Se-rich Ge-Se glasses for use in programmable metallization cell devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. The way in which Ag incorporates into the chalcogenide film during photo-diffusion is examined using Rutherford backscattering spectroscopy analysis and Raman spectroscopy. The results suggest that an Ag-rich phase separates due to the reaction of Ag with free Se from the chalcogenide glass leaving a Ge-rich chalcogenide matrix. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1023 / 1027
页数:5
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