Novel Ge-profile design for high-speed SiGe HBTs: modelling and analysis

被引:13
作者
Patri, VS [1 ]
Kumar, MJ [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, New Delhi 110016, India
来源
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1999年 / 146卷 / 05期
关键词
D O I
10.1049/ip-cds:19990626
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors investigate the optimisation of the Ge profile in SiGe HBTs, with the aim of enhancing current gain without degrading the base transit time at different ambient temperatures and points of film stability. Using a new box-triangular Ge profile, they show that a current gain enhancement of similar to 3 is achievable at T = 300K for y(tot) = 14% Ge without degrading the base transit time corresponding to that of a triangular Ge profile. The effect of an electric field on the base transit time is also studied. It is shown that for I W-B = 50nm, the limiting base electric field is similar to 40kV/cm, beyond which any reduction in the base transit time is offset by the electron mobility degradation.
引用
收藏
页码:291 / 296
页数:6
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