A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

被引：9

作者：

Brederlow, R ^{[1
]}

Koh, J ^{[1
]}

Thewes, R ^{[1
]}

机构：

[1] Infineon Technol AG, Automot Ind & Multimarket, D-85579 Munich, Germany

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 04期

关键词：

D O I：

10.1016/j.sse.2006.03.037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation. These observations are important for modern analog and RF circuits. The classically used low frequency noise models for circuit simulation are not able to explain this effect. In this paper, we extend the classical approach to non-equilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition, we present measurements which are in good agreement with the derived model, and suggest approaches to implement the model within standard compact models. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：668 / 673

页数：6

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