Conductance and leakage in superconducting tunnel junctions

被引：3
作者：
Goodchild, MS [1 ]
Barber, ZH [1 ]
Blamire, MG [1 ]
机构：
[1] UNIV CAMBRIDGE,DEPT MAT SCI,CAMBRIDGE CB2 3QZ,ENGLAND
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 04期
关键词：
D O I：
10.1116/1.580031
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report an analysis of data from Nb/AlOx/Nb tunnel junctions. We show that both conductance and subgap leakage follow simple scaling laws as a function of oxidation conditions. The leakage effects are discussed in terms of a simple physical model of tunnel barrier inhomogeneity that is also applicable to directly deposited barriers on NbN. We demonstrate that an improvement in barrier properties can be achieved by the use of a buffer layer overlying the barrier, and that this improvement is consistent with a model based on resputtering effects. (C) 1996 American Vacuum Society.
引用
收藏
页码：2427 / 2432
页数：6
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