Hysteresis. phenomena. in reverse biased InAsSbP/InAs heterostructure

被引：2

作者：

Rathgeb, Stephane

Moeglin, Jean-Pierre

Boffy, Alain

Pasquinelli, Marcel

Palais, Olivier

机构：

[1] French German Res Inst St Louis, ISL, F-68301 St Louis, France

[2] Univ Aix Marseille 3, TECSEN Lab, CNRS,UMR 6122, Fac Sci & Tech, F-13397 Marseille 20, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

关键词：

Coupled circuits - Current voltage characteristics - Electron tunneling - Heterojunctions - Magnetic hysteresis - Photodetectors;

D O I：

10.1063/1.2220532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present experimental and theoretical results on InAsSbP/InAs photodetectors for infrared detection. An unexpected hysteresis has been shown during the current-voltage I(V) investigations (300 K). Drastic changes in the hysteresis cycle are observed depending on the temperature of the heterostructure. Additionally, the time step of the measurements has an influence on the hysteresis form. The appearance of such hysteresis can be explained by a tunneling effect and by considering the temperature of the structure. Experimental I(V) characteristics are in good agreement with the tunnel current coupled to a thermal approach. (c) 2006 American Institute of Physics.

引用

页数：3

共 8 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].