Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm

被引：19

作者：

Goldmann, Elias ^{[1
]}

Paul, Matthias ^{[2
]}

Krause, Florian F. ^{[3
]}

Mueller, Knut ^{[3
]}

Kettler, Jan ^{[2
]}

Mehrtens, Thorsten ^{[3
]}

Rosenauer, Andreas ^{[3
]}

Jetter, Michael ^{[2
]}

Michler, Peter ^{[2
]}

Jahnke, Frank ^{[1
]}

机构：

[1] Univ Bremen, Inst Theoret Phys, D-28334 Bremen, Germany

[2] Univ Stuttgart, Inst Halbleiteropt & Funktionelle Grenzflachen, D-70569 Stuttgart, Germany

[3] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 15期

关键词：

TRANSMISSION ELECTRON-MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; GAAS; SEMICONDUCTORS; IMAGES;

D O I：

10.1063/1.4898186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3 mu m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 20-40 nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1 nm and 5 nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 23 条

[1] Coulomb effects in semiconductor quantum dots
Baer, N
Gartner, P
Jahnke, F
[J]. EUROPEAN PHYSICAL JOURNAL B, 2004, 42 (02) : 231 - 237
[2] Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition
Bloch, J
Shah, J
Hobson, WS
Lopata, J
Chu, SNG
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (15) : 2199 - 2201
[3] Analytical solution of the quantum-state tomography of the biexciton cascade in semiconductor quantum dots: Pure dephasing does not affect entanglement
Carmele, Alexander
Knorr, Andreas
[J]. PHYSICAL REVIEW B, 2011, 84 (07):
[4] Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence
Goldmann, Elias
Barthel, Stefan
Florian, Matthias
Schuh, Kolja
Jahnke, Frank
[J]. APPLIED PHYSICS LETTERS, 2013, 103 (24)
[5] InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Hospodkova, A.
Hulicius, E.
Pangrac, J.
Oswald, J.
Vyskocil, J.
Kuldova, K.
Simecek, T.
Hazdra, P.
Caha, O.
[J]. JOURNAL OF CRYSTAL GROWTH, 2010, 312 (08) : 1383 - 1387
[6] Influence of InGaAs cap layers with different In concentration on the properties of InGaAs quantum dots
Litvinov, D.
Blank, H.
Schneider, R.
Gerthsen, D.
Vallaitis, T.
Leuthold, J.
Passow, T.
Grau, A.
Kalt, H.
Klingshirn, C.
Hetterich, M.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)
[7] Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure
Liu, HY
Hopkinson, M
Harrison, CN
Steer, MJ
Frith, R
Sellers, IR
Mowbray, DJ
Skolnick, MS
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2931 - 2936
[8] Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images
Mehrtens, Thorsten
Mueller, Knut
Schowalter, Marco
Hu, Dongzhi
Schaadt, Daniel M.
Rosenauer, Andreas
[J]. ULTRAMICROSCOPY, 2013, 131 : 1 - 9
[9] Michler P, 2009, NANOSCI TECHNOL, P185, DOI 10.1007/978-3-540-87446-1_6
[10] Comprehensive investigation of optical and electronic properties of tunable In As QDs optically active at O-band telecommunication window with (In)GaAs surrounding material
Nasr, O.
Alouane, M. H. Hadj
Maaref, H.
Hassen, F.
Sfaxi, L.
Ilahi, B.
[J]. JOURNAL OF LUMINESCENCE, 2014, 148 : 243 - 248

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