Oblique incidence at a gyroelectric/dielectric interface at sub-Terahertz and Terahertz frequencies

Expressions for the Reflection coefficient for oblique incidence at an interface between a dielectric and a magnetised semiconductor are presented in this paper. An effective permittivity, epsilon(eff) and a transverse propagation coefficient, k(eff) for an infinite gyroelectric medium have been derived for the case in which the electric field is perpendicular to the applied magnetic field. Graphs of effective permittivity versus frequency for Indium Antimonide (InSb) at room temperature (300K) for both the lossless and lossy cases are shown together with the effects of the positive and the negative region. The dependence of the complex Reflection coefficient on both the frequency and the angle of incidence, including the concept of critical angle, are also presented.