Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers

被引：17
作者：
Cheng, YC
Wu, CM
Chen, MK
Yang, CC
Feng, ZC
Li, GA
Yang, JR
Rosenauer, A
Ma, KJ
机构：
[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan
[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
[4] ShenZhen FangDa GuoKe Optron Tech Co Ltd, Zhenzhen City, Peoples R China
[5] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan
[6] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
[7] Chung Hua Univ, Dept Engn Mech, Hsinchu, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 26期
关键词：
D O I：
10.1063/1.1767603
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical properties and nanostructures of two InGaN/GaN quantum-well (QW) samples of slightly different structures are compared. In one of the samples, InN interfacial layers of a few monolayers are added to the structure between wells and barriers for improving the QW interface quality. Compared with the standard barrier-doped QW sample, the addition of the InN interfacial layers does improve the QW interface quality and hence the photon emission efficiency. The strain state analysis images show the high contrast between the clear QW interface in the sample with InN layers and the diffusive QW boundaries in the reference sample. The detection-energy-dependent photoluminescence excitation data reveal the consistent results. (C) 2004 American Institute of Physics.
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收藏
页码：5422 / 5424
页数：3
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