Dielectric properties of sol-gel derived Pb(Zr0.70Ti0.30)O3/PbTiO3 and Pb(Zr0.70Ti0.30)O3/BaTiO3 multilayer thin films

被引:0
作者
Zou, Q
Ruda, H
Yacobi, BG
Farrell, M
机构
[1] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E, Canada
[2] Energenius Inc, N York, ON M3B 3A8, Canada
关键词
ferroelectrics; dielectrics; interface; multiplayer; XRD;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pb(Zr(0.70)Ti(0.30))O(3) (PZT)/PbTiO(3) (PT) and Pb(Zr(0.70)Ti(0.30))O(3)(PZT)/ BaTiO(3) (BT) multilayer films were prepared on Pt/Ti/SiO(2)/Si substrates using metallorganic sol-gel processing. The effect of the thickness of BT or PT layers on microstructure and dielectric and ferroelectric properties are studied. An appreciable increase in the breakdown field strength (E(B)), decrease in coercive field (E(C)) and leakage current (I(L)), and great improvements in the fatigue behavior with increasing number of BT or PT layers, are observed. The improvements of dielectric and ferroelectric properties of PZT/BT and PZT/PT multilayer films indicated the important role of BT or PT interlayer for PZT capacitors. Furthermore the relationship between microstructure and dielectric properties is also discussed.
引用
收藏
页码:481 / 486
页数:6
相关论文
共 8 条
[1]   Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes [J].
Bao, DH ;
Mizutani, N ;
Yao, X ;
Zhang, LY .
APPLIED PHYSICS LETTERS, 2000, 77 (07) :1041-1043
[2]  
CATTAN E, 1995, FERROELECTRIC THIN F, V5, P291
[3]  
CHUNG I, 1995, MATER RES SOC SYMP P, V361, P249
[4]  
DOI H, 1994, JPN J APPL PHYS 1, V33, P5159, DOI 10.1143/JJAP.33.5159
[5]   STUDY ON FERROELECTRIC THIN-FILMS FOR APPLICATION TO NDRO NONVOLATILE MEMORIES [J].
NAKAO, Y ;
NAKAMURA, T ;
KAMISAWA, A ;
TAKASU, H .
INTEGRATED FERROELECTRICS, 1995, 6 (1-4) :23-34
[6]   LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PEROVSKITE PB(ZRXTI1-X)O3 THIN-FILMS [J].
PENG, CH ;
DESU, SB .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :16-18
[7]   Lead zirconate titanate (PZT) film capacitor with a multilayer construction [J].
Tsao, BH ;
Carr, SF ;
Weimer, JA .
PROCEEDINGS OF THE IEEE 1998 NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE, 1998, :263-270
[8]   Growth and properties of PbTiO3/Pb(Zr, Ti)O3 heterostructures deposited by sputtering on Si substrates [J].
Velu, G ;
Haccart, T ;
Remiens, D .
INTEGRATED FERROELECTRICS, 1999, 23 (1-4) :1-14