Effect of Annealing on Proton Irradiated AlGaN/GaN based micro-Hall sensors

被引：1

作者：

Abderrahmane, A. ^{[1
]}

Takahashi, H. ^{[1
]}

Tashiro, T. ^{[1
]}

Ko, P. J. ^{[1
,2
]}

Okada, H. ^{[1
,2
]}

Sato, S. ^{[3
]}

Ohshima, T. ^{[3
]}

Sandhu, A. ^{[1
,2
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, 1-1 Hibarigaoka,Tempaku Cho, Toyohashi, Aichi 4418580, Japan

[2] Toyohashi Univ Technol, EIIRIS, Toyohashi, Aichi 4418580, Japan

[3] JAEA, Quantum Beam Sci Directorate, Takasaki, Gunma 3701292, Japan

来源：

IRAGO CONFERENCE 2013 | 2014年 / 1585卷

关键词：

Hall effect devices; Irradiation effects on solids; Hard electronics;

D O I：

10.1063/1.4866629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of annealing at 673 K on irradiated micro-hall sensors irradiated with protons at 380keV and fluences of 10(14), 10(15) and 10(16) protons/cm(2) is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 10(15) protons/cm(2) the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.

引用

页码：123 / 127

页数：5

共 13 条

[1] Effect of proton irradiation on AlGaN/GaN micro-Hall sensors [J].