Effect of Annealing on Proton Irradiated AlGaN/GaN based micro-Hall sensors

被引：1
|
作者：
Abderrahmane, A. [1 ]
Takahashi, H. [1 ]
Tashiro, T. [1 ]
Ko, P. J. [1 ,2 ]
Okada, H. [1 ,2 ]
Sato, S. [3 ]
Ohshima, T. [3 ]
Sandhu, A. [1 ,2 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, 1-1 Hibarigaoka,Tempaku Cho, Toyohashi, Aichi 4418580, Japan
[2] Toyohashi Univ Technol, EIIRIS, Toyohashi, Aichi 4418580, Japan
[3] JAEA, Quantum Beam Sci Directorate, Takasaki, Gunma 3701292, Japan
来源：
IRAGO CONFERENCE 2013 | 2014年 / 1585卷
关键词：
Hall effect devices; Irradiation effects on solids; Hard electronics;
D O I：
10.1063/1.4866629
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of annealing at 673 K on irradiated micro-hall sensors irradiated with protons at 380keV and fluences of 10(14), 10(15) and 10(16) protons/cm(2) is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 10(15) protons/cm(2) the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.
引用
收藏
页码：123 / 127
页数：5
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