Tuning of the intersubband absorption in a shallow InAs/InP quantum wire by a transverse electric field

被引:4
作者
Wu, Shudong [1 ]
Wang, Lichun
Li, Huoquan
Zeng, Xianghua
机构
[1] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
关键词
Quantum wire; Transverse electric field; Intersubband absorption energy; Intersubband oscillator strength; OPTICAL-ABSORPTION; BINDING-ENERGY; EXCITON; TRANSITIONS; STATES;
D O I
10.1016/j.spmi.2013.12.014
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Intersubband absorption in a shallow InAs/InP quantum wire (QWR) under a transverse electric field perpendicular to the wire axis is investigated theoretically using the plane wave method in detail. The transverse field is oriented either parallel or perpendicular to the height direction of QWR. The inteisubband absorption energy increases with increasing the tilt angle of field along the height direction. The large cross-sectional ratio of QWR leads to the strong polarization anisotropy of the intersubband absorption, which is sensitive to one polarization of light along the width direction while it is insensitive to one polarization of light along the height direction. The intersubband oscillator strength of polarized light along the width direction decreases as the tilt angle of field increases whereas that of polarized light along the height direction first increases until it reaches a maximum, and then decreases. A transverse applied field is shown to provide an efficient tool to tune the wavelength and output of the intersubband device of shallow QWR. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:33 / 39
页数:7
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