Color centers and charge state recharge in γ-irradiated Yb:YAP

被引：4
|
作者：
Dong, Yongjun
Zhou, Guoqing
Xu, Jun
Zhao, Guangjun
Su, Fenglian
Su, Liangbi
Li, Hongjun
Si, JiLiang
Qian, Xiaobo
Li, Xiaoqing
Shen, Jun
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
[3] Anhui Univ, Hefei 230039, Peoples R China
来源：
OPTICAL MATERIALS | 2006年 / 28卷 / 12期
关键词：
color center; defects; gamma-ray; irradiation; Yb : YAP;
D O I：
10.1016/j.optmat.2005.08.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% Yb:YAP have been studied. The change in the additional absorption (AA) spectra is mainly related to the charge exchange of the impurity Fe2+, Fe3+ and Yb3+ ions. Two impurity color center bands at 255 and 313 nm were attributed to Fe3+ and Fe2+ ions, respectively. The broad AA band centered at 385 nm may be associated with the cation vacancies and F-type center. The transition Yb3+ -> Yb2+ takes place in the process of gamma-irradiation. Oxygen annealing and gamma-ray irradiation lead to an opposite effect on the absorption properties of the Yb:YAP crystal. In the air annealing process, the transition Fe2+ -> Fe3+ and Yb2+ -> Yb3+ take place and the color centers responsible for the 385 nm band was destroyed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：1377 / 1380
页数：4
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