A self-consistent calculation of intrinsic magnetoelectric properties in magnetic tunnel junctions

被引：1
|
作者：
Han, XF
Lai, WY
Wang, JQ
O'Connor, CJ
Miyazaki, T
机构：
[1] Chinese Acad Sci, State Key Lab Magnet, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
[4] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
[5] Trinity Coll Dublin, Dept Phys, Dublin 02, Ireland
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 239卷 / 1-3期
关键词：
tunnel magneto resistance; spin-dependent transport; magnon excitation; spin-polarization;
D O I：
10.1016/S0304-8853(01)00549-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Very concise formulations for the bias voltage or/and temperature dependences of tunnel magnetoresistance ratio and resistances were deduced based on a spin-polarized tunneling model and an anisotropic wavelength-cut off energy E-c(7) of a spin-wave spectrum in magnetic tunnel junctions (MTJs). The main intrinsic magnetoelectric properties of MTJ can be self-consistently evaluated using these concise formulations. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：167 / 169
页数：3
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