Observation of bistable resistance memory switching in CuO thin films

被引：46

作者：

Kim, C. H. ^{[1
,2
]}

Jang, Y. H. ^{[1
,2
]}

Hwang, H. J. ^{[1
,2
]}

Sun, Z. H. ^{[1
,2
]}

Moon, H. B. ^{[4
]}

Cho, J. H. ^{[1
,2
,3
]}

机构：

[1] Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea

[2] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea

[3] Pusan Natl Univ, Dept Phys Educ, Pusan 609735, South Korea

[4] Nextron Corp, Pusan 609735, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

关键词：

atomic force microscopy; copper compounds; electric impedance; electrical conductivity; random-access storage; thin films; NIO FILMS; CU2O;

D O I：

10.1063/1.3098071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a bistable resistance switching behavior of CuO thin films. To understand the resistance switching mechanism, we have studied impedance spectroscopy and nanoscale electrical property. From the frequency-dependent impedance properties of CuO thin films in high resistance (R(OFF)) and low resistance (R(ON)) states, we infer the formation of conducting paths generated by external bias as a possible origin of the bistable resistance states. In addition, the observation of inhomogeneous conducting path using a conducting atomic force microscope is also consistent with our inference.

引用

页数：3

共 21 条

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