The anharmonic behavior of phonons and intrinsic thermal conductivity associated with the umklapp scattering in monolayer MoS2 sheet are investigated via first-principles calculations within the framework of density functional perturbation theory. In contrast to the negative Gruneissen parameter (gamma) occurring in low-frequency modes in graphene, positive gamma in the whole Brillouin zone is demonstrated in monolayer MoS2 with much larger gamma for acoustic modes than that for the optical modes, suggesting that monolayer MoS2 sheet possesses a positive coefficient of thermal expansion. The calculated phonon lifetimes of the infrared active modes are 5.50 and 5.72 ps for E' and A(2)'', respectively, in good agreement with experimental results obtained by fitting the dielectric oscillators with the infrared reflectivity spectrum. The lifetime of the Raman A(1)' mode (38.36 ps) is about seven times longer than those of the infrared modes. The dominated phonon mean free path of monolayer MoS2 is less than 20 nm, about 30-fold smaller than that of graphene. Combined with the nonequilibrium Green's function calculations, the room temperature thermal conductivity of monolayer MoS2 is found to be around 23.2 Wm(-1) K-1, two orders of magnitude lower than that of graphene.
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Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
Univ Arkansas, Mat Sci & Engn MSEN, Fayetteville, AR 72701 USAUniv Arkansas, Dept Phys, Fayetteville, AR 72701 USA
Andharia, Eesha
Alqurashi, Hind
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Al Baha Univ, Coll Sci, Phys Dept, Alaqiq 65779, Saudi ArabiaUniv Arkansas, Dept Phys, Fayetteville, AR 72701 USA
Alqurashi, Hind
Pandit, Abhiyan
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City Univ New York, Coll Staten Isl, Dept Phys, Staten Isl, NY 10314 USAUniv Arkansas, Dept Phys, Fayetteville, AR 72701 USA
Pandit, Abhiyan
Hamad, Bothina
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Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
Univ Jordan, Phys Dept, Amman 11942, JordanUniv Arkansas, Dept Phys, Fayetteville, AR 72701 USA
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Catalonia Inst Energy Res IREC, Jardins de les Dones de Negre 1, E-08930 St Adria De Besos, SpainCSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, E-08193 Barcelona, Spain