Feasibility of Cu/a-Si bilayer for high data-transfer-rate write-once blue-ray recording

The formation of Cu3Si phase, and the subsequent crystallization of the remaining amorphous Si were observed in the Cu/a-Si bilayer under thermal and laser pulse annealing. The crystallization temperature of the a-Si layer with a thin Cu underlayer was reduced to 485degreesC due to the formation of Cu3Si precipitates that serve as nucleation sites for the crystallization of the remaining amorphous Si. At the wavelength of 405 nm, the Cu/a-Si bilayer exhibited an optical contrast of 15.4% and an absorptance of 47% providing high readability and adequate recording sensitivity. Moreover, the maximum data-transfer-rates that can be achieved by the Cu/a-Si bilayer at recording powers of 6, 8, and 10mW were estimated to be approximately 23, 46, and 223 Mb/s. respectively. It is evident that the Cu/a-Si bilayer shows great feasibility for high data-transfer-rate write-once blue-ray recording.