Electron-Selective Scandium-Tunnel Oxide Passivated Contact for n-Type Silicon Solar Cells

被引：19

作者：

Quan, Cheng ^{[1
,2
]}

Tong, Hui ^{[1
,3
]}

Yang, Zhenhai ^{[1
]}

Ke, Xiaoxing ^{[4
]}

Liao, Mingdun ^{[1
]}

Gao, Pingqi ^{[1
]}

Wang, Dan ^{[1
]}

Yuan, Zhizhong ^{[2
]}

Chen, Kangmin ^{[2
]}

Yang, Jie ^{[5
]}

Zhang, Xinyu ^{[5
]}

Shou, Chunhui ^{[6
]}

Yan, Baojie ^{[1
]}

Zeng, Yuheng ^{[1
]}

Ye, Jichun ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang City 212013, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Beijing Univ China, Inst Microstruct & Property Adv Mat, Beijing 100049, Peoples R China

[5] Zhejiang Jinko Solar Co Ltd, Haining City 314400, Peoples R China

[6] Zhejiang Energy Grp R&D, Hangzhou 310003, Zhejiang, Peoples R China

来源：

SOLAR RRL | 2018年 / 2卷 / 08期

基金：

中国国家自然科学基金;

关键词：

electron-selective contacts; low work function metals; scandium; tunnel oxide;

D O I：

10.1002/solr.201800071

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Dopant-free carrier-selective contacts have a high potential for cost reduction in solar panel production because of the simple structure and manufacturing procedure. Increasing the carrier selectivity is critical for improving the efficiency of heterostructure solar cells. Low work function metals have been explored as electron-selective contact (ESC) recently. In this paper, a high-performance silicon-oxide/scandium (SiOx/Sc) ESC structure is explored as an ESC that exhibits a good contact and surface passivation. The lowest contact resistivity of 23mcm(2) and the champion single-surface saturated dark current density (J(oe)) of 61fAcm(-2) have been achieved with a full-area SiOx/Sc passivated contact. It was revealed that the ScOx formed by the reaction of Sc and SiOx was the critical material modifying the interfacial work function. Finally, the champion efficiency of >15% and an open circuit voltage (V-oc) of >620mV are achieved for the full-area rear SiOx/Sc passivated-contact n-type c-Si solar cell. A comprehensive analysis indicates that a high-efficiency n-type solar cell with efficiency of >20% is expected with the application of high-efficiency structures.

引用

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