Room temperature ferromagnetism in Mn-doped γ-Ga2O3 with spinel structure

被引：93

作者：

Hayashi, Hiroyuki ^{[1
]}

Huang, Rong

Ikeno, Hidekazu

Oba, Fumiyasu

Yoshioka, Satoru

Tanaka, Isao

Sonoda, Saki

机构：

[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期

关键词：

D O I：

10.1063/1.2369541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mn-doped Ga2O3 (7 cation % of Mn) thin film has been grown on c-cut sapphire substrate using pulsed-laser deposition technique. Electron diffraction analyses by transmission electron microscopy found that the Mn-doped film shows gamma phase with spinel structure, which is different from undoped film showing beta phase. No secondary phase can be detected. Combination of Mn-L-2,L-3 near edge x-ray absorption experiments with first-principles many-electron calculations unambiguously implies that Mn atoms are located at tetrahedrally coordinated Ga sites with a valence of +2. The doped sample shows ferromagnetism up to 350 K. (c) 2006 American Institute of Physics.

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