Loading effect of EUT on maximal electric field level in a reverberation chamber for immunity test

被引：0

作者：

Zhang, DI ^{[1
]}

Li, EP ^{[1
]}

机构：

[1] Inst High Performance Comp, Electromagnet Compatibil Div, Singapore 117528, Singapore

来源：

2002 IEEE INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY, VOLS 1 AND 2, SYMPOSIUM RECORD | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For EMC immunity test, the maximal electric field generated by a test facility arouses a lot of concerns. This paper presents a technique to evaluate the loading effect of EUT on the maximal electric field level in a reverberation chamber. The influence of EUT is studied with different conductivities. From the results it is seen that the EUT could sharply load the reverberation chambe when it presents large surface area but low conductivities.

引用

页码：972 / 975

页数：4