Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN

被引：12

作者：

Strocov, VN ^{[1
]}

Schmitt, T

Rubensson, JE

Blaha, P

Paskova, T

Nilsson, PO

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[2] Uppsala Univ, S-75121 Uppsala, Sweden

[3] Vienna Tech Univ, Inst Mat Chem, A-1060 Vienna, Austria

[4] Linkoping Univ, S-58183 Linkoping, Sweden

[5] Chalmers Univ Technol, S-41296 Gothenburg, Sweden

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2004年 / 241卷 / 07期

关键词：

D O I：

10.1002/pssb.200409040

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Systematic experimental data on resonant inelastic X-ray scattering (RIXS) in GaN near the N K-edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k-resolved band structure information for GaN crystals and nanostructures. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：R27 / R29

页数：3

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