Shear strain induced modulation to the transport properties of graphene

被引：23

作者：

He, Xin ^{[1
]}

Gao, Li ^{[2
]}

Tang, Ning ^{[1
]}

Duan, Junxi ^{[1
]}

Xu, Fujun ^{[1
]}

Wang, Xinqiang ^{[1
,3
]}

Yang, Xuelin ^{[1
]}

Ge, Weikun ^{[4
]}

Shen, Bo ^{[1
,3
]}

机构：

[1] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Jiangsu Univ, Inst Life Sci, Zhenjiang 212013, Jiangsu, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期

基金：

中国国家自然科学基金;

关键词：

TRANSISTORS; FILMS; DIELECTRICS;

D O I：

10.1063/1.4894082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Applying shear strain has been considered as a hopeful method to open a band gap of graphene. To study the transport properties of graphene under shear strain, a device was fabricated to apply shear strain, up to 16.7%, to graphene grown by chemical vapor deposition method. A top gate with ionic liquid as the dielectric material was used to tune the carrier density. The conductance of the Dirac point and carrier mobility is found to increase with a comparatively small increasing strain but then decrease with a larger one. Such a behavior might be related to several factors: the wrinkles, the transverse conducting channels, and the grain boundaries of graphene. Our study is helpful to further understand the strain engineering in graphene. (C) 2014 AIP Publishing LLC.

引用

页数：4

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