Monte Carlo simulation of ion implantation in crystalline SiC

We report first the results of a. simulation study of ion implantation in crystalline 6H-SiC. Calculations were performed with a Monte Carlo code modified to account for the hexagonal lattice structure of the material. After an approximate determination of empirical parameters of electronic energy loss, performed by comparison of simulated profiles with experimental data as reported in the literature, a detailed study of the effects of beam-target orientation has been made for a few specific cases. Results have been compared with those of similar simulations made in cubic 3C-SiC, where the same model parameters were used, in order to emphasize differences due to the different crystallographic structure and surface orientation of the two phases. Conditions which originate deep channeling tails in the implanted profiles are identified, as well as conditions suitable to obtain the minimum width profile.