High-resolution study of X-ray resonant raman scattering at the K edge of silicon

被引:31
作者
Szlachetko, J. [1 ]
Dousse, J. -Cl.
Hoszowska, J.
Pajek, M.
Barrett, R.
Berset, M.
Fennane, K.
Kubala-Kukus, A.
Szlachetko, M.
机构
[1] Univ Fribourg, Dept Phys, CH-1700 Fribourg, Switzerland
[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[3] Jan Kochanowski Univ Humanities & Sci, Inst Phys, PL-25406 Kielce, Poland
关键词
D O I
10.1103/PhysRevLett.97.073001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the 1s-3p excitation were derived. The Kramers-Heisenberg formalism was found to reproduce quite well the x-ray RRS spectra, which is of prime importance for applications of the total-reflection x-ray fluorescence technique.
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页数:4
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