Electrical Characterization of Metal Insulator Semiconductor using ZnO Low Deposition Temperature as Semiconductor Layer

被引：1

作者：

Lyly Nyl, Ismail ^{[1
]}

Saifullah Ali, Harun ^{[1
]}

Habibah, Zulkefle ^{[1
]}

Sukreen Hana, Herman ^{[1
]}

Mahmood, Mohamad Rusop ^{[1
]}

机构：

[1] Univ Teknol MARA UiTM, Fac Elect Engn, NANOElecT Ctr NET, Shah Alam 40450, Selangor, Malaysia

来源：

NANOSCIENCE, NANOTECHNOLOGY AND NANOENGINEERING | 2014年 / 832卷

关键词：

MIS; low temperature of ZnO; PMMA; electrical properties; structural properties; THIN-FILM TRANSISTORS; GATE INSULATOR;

D O I：

10.4028/www.scientific.net/AMR.832.270

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40 degrees C, 60 degrees C, 80 degrees C, 100 degrees C and 120 degrees C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120 degrees C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

引用

收藏

页码：270 / 275

页数：6

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