Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates

被引:2
作者
Mendez-Garcia, Victor H. [1 ]
Martinez-Velis, I. [2 ]
Rojas-Ramirez, J. S. [2 ]
Contreras-Guerrero, R. [2 ]
Ramirez-Lopez, M. [2 ]
Hernandez-Rosas, J. [2 ]
Garcia-Linan, G. [1 ]
Gorbatchev, A. Yu. [1 ]
Zamora-Peredo, L. [3 ]
Lopez-Lopez, M. [4 ]
机构
[1] Univ Autonoma San Luis Potosi, IICO, San Luis Potosi 78210, Mexico
[2] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Phys, Mexico City 07000, DF, Mexico
[3] Univ Politecn San Luis Potosi, Ctr Hist, San Luis Potosi 78210, Mexico
[4] Univ Nacl Autonoma Mexico, Ctr Fis Aplicada & Tecnol Avanzada, Queretaro 76000, Mexico
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 05期
关键词
QUANTUM DOTS; GAAS; SURFACES;
D O I
10.1002/pssa.200881412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The molecular beam epitaxial (MBE) growth of InAs nanostructures on GaAs(631)-oriented substrates is studied by photoluminescence (PL) and photoreflectance spectroscopy (PR). First, a corrugated surface conformed by regularly spaced grooves aligned along the [393] azimuth was formed by the GaAs homoepitaxial growth on the (631) substrate. On this template, we proceeded with the deposition of InAs at several thicknesses in the range of 1 to 4.5 monolayers (MLs). An atomic force microscopy (AFM) analysis of samples without GaAs capping, revealed that assemblage of QDs occurs only after the deposition of the equivalent to similar to 1.9 ML of InAs. On these samples, we observed changes on the PR line-shape in the near-bandgap GaAs region linked to the quantity of InAs deposited. The intensity of the built in electric fields was correlated with the strain state at the heterointerface, as a consequence of the self induced piezoelectric effect, typical from high index surfaces. On the other hand, when the samples were capped with a 100 A thick GaAs layer, strong emission of the nanostructures occurs even for deposited quantities of InAs as low as 1 ML. Since for this InAs thickness the self-assemblage of QDs is not observed, the optical transitions observed were associated with the optical emission of self assembled semiconductor quantum wires, promoted by surface diffusion anisotropy, characteristic of the (631) plane. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:836 / 841
页数:6
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