Two-Sided Silicon Nanowire Array/Bulk Thermoelectric Power Generator

被引:27
作者
Xu, Bin [1 ]
Khouri, Wasim [1 ]
Fobelets, Kristel [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England
关键词
Energy harvesting; power; silicon nanowire; thermoelectric; PERFORMANCE;
D O I
10.1109/LED.2014.2307673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To improve the output power of n- and p-type Si nanowire array (NWA)/bulk thermoelectric power generators (TEGs) fabricated using metal assisted chemical etching, post-nanowire-etch spin-on-doping (SOD), and arrays on both sides of the bulk are used. Post-process SOD increases the power factor and removes surface depletion/inversion effects while maintaining crystalline NWs. A maximum output power of 3.5 mu W for a p-NWA/bulk/NWA TEG with NWA length of 23 and 24 mu m is obtained for an external temperature difference of 37 degrees C and a TEG area of 25 mm(2).
引用
收藏
页码:596 / 598
页数:3
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