Characteristics of hydrogenated amorphous carbon films deposited by large-area microwave-sustained surface wave plasma

被引:53
作者
Nagatsu, M
Sano, T
Takada, N
Toyoda, N
Tanga, M
Sugai, H
机构
[1] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 5328561, Japan
[2] Nagoya Univ, Dept Elect Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Nissin Inc, Takarazuka, Hyogo 665047, Japan
[4] Toyo Kohan Co Ltd, Kudamatsu 7448611, Japan
关键词
diamond-like carbon; field emission; amorphous carbon; chemical vapor deposition;
D O I
10.1016/S0925-9635(01)00616-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, we report the characteristics of hydrogenated amorphous carbon (a-C:H) films grown at room temperature by chemical vapor deposition (CVD) with a 40-cm diameter planar surface wave plasma in a He/CH4 gas mixture. The film characteristics such as electron field emission and the atomic or molecular bonding structures, measured with XPS, FT-IR spectrophotometry and NMR analysis, have been studied. The electron emission current density of 1 muA/cm(2) was obtained at an electric field of 4 V/mum in the 'as-grown' a-C:H film. From the NMR measurements, it is found that the a-C:H film typically contains 25% of graphite-like sp(2)-carbon bondings and 75% of sp(3)-carbon bondings with one or more hydrogen atoms. The results of electrical conductivity measurements of a-C:H films suggest that spatially localized conduction channels formed by the Praphite-like sp(2)-carbons might be responsible for the electron emission in the a-C:H films by locally-enhanced electric fields. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:976 / 979
页数:4
相关论文
共 14 条
[1]  
Amaratunga GAJ, 1996, APPL PHYS LETT, V68, P2529, DOI 10.1063/1.116173
[2]   Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon [J].
Conway, NMJ ;
Ilie, A ;
Robertson, J ;
Milne, WI ;
Tagliaferro, A .
APPLIED PHYSICS LETTERS, 1998, 73 (17) :2456-2458
[3]   Growth mechanism and cross-sectional structure of tetrahedral amorphous carbon thin films [J].
Davis, CA ;
Amaratunga, GAJ ;
Knowles, KM .
PHYSICAL REVIEW LETTERS, 1998, 80 (15) :3280-3283
[4]  
Funer M, 1998, APPL PHYS LETT, V72, P1149, DOI 10.1063/1.120997
[5]   Field emission from tetrahedral amorphous carbon as a function of surface treatment and substrate material [J].
Hart, A ;
Satyanarayana, BS ;
Milne, WI ;
Robertson, J .
APPLIED PHYSICS LETTERS, 1999, 74 (11) :1594-1596
[6]  
LATHER F, 1997, DIAM RELAT MATER, V6, P1111
[7]   Field-emission characteristics of hydrogenated amorphous carbon films prepared by surface wave plasma [J].
Nagatsu, M ;
Sano, T ;
Takada, N ;
Guang, WX ;
Hirao, T ;
Sugai, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (9AB) :L929-L932
[8]   Mode identification of surface waves excited in a planar microwave discharge [J].
Nagatsu, M ;
Xu, G ;
Ghanashev, I ;
Kanoh, M ;
Sugai, H .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1997, 6 (03) :427-434
[9]  
NAGATSU M, 2001, P I5 INT C PHEN ION, V2, P45
[10]   The field emission characteristics of a-C:H thin films prepared by helical resonator plasma enhanced chemical vapor deposition [J].
Rho, SJ ;
Shim, JY ;
Chi, EJ ;
Baik, HK ;
Lee, SM .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (8A) :L1051-L1054