Temperature-dependent structure and magnetism of Mn-doped Ge nanowires

被引：6
|
作者：
Majumdar, S. [1 ]
Bhaumik, S. [1 ]
Rana, K. [2 ]
Ray, S. K. [1 ]
Das, A. K. [1 ]
机构：
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
[2] Indian Inst Technol, Dept Met & Mat Engn, Haridwar 247667, Uttarakhand, India
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 04期
关键词：
clusters; Ge3Mn5; magnetic semiconductor; nanowires; spintronics; FERROMAGNETISM; GROWTH; MN5GE3;
D O I：
10.1002/pssa.201330297
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a study on the growth temperature dependent phase formation and its magnetic property in Mn-doped Ge nanowires (NWs) fabricated at temperature (T-G) varying from 600 to 900 degrees C using vapor-liquid-solid technique. Structural and magnetic measurements on the nanowires reveal that Mn are not homogeneously distributed in Ge-matrix, but atomic clusters (Mn-rich regions) are formed in lightly doped Ge matrix (GeMn-matrix) at 600 degrees C. Upon increasing T-G, Ge3Mn5 compound starts to nucleate in expense of atomic clusters following the migration of Mn from GeMn-matrix. At 900 degrees C, only precipitates of Ge3Mn5 in cluster-free Ge-matrix are found.
引用
收藏
页码：877 / 883
页数：7
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