Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

被引：199

作者：

Khan, Asif Islam ^{[1
]}

Chatterjee, Korok ^{[1
]}

Duarte, Juan Pablo ^{[1
]}

Lu, Zhongyuan ^{[1
]}

Sachid, Angada ^{[1
]}

Khandelwal, Sourabh ^{[1
]}

Ramesh, Ramamoorthy ^{[2
,3
,4
]}

Hu, Chenming ^{[1
]}

Salahuddin, Sayeef ^{[1
,4
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 01期

关键词：

Negative capacitance; ferroelectric; sub-60; mV/decade; NC-FinFET;

D O I：

10.1109/LED.2015.2501319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length L-g = 100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model: Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.

引用

页码：111 / 114

页数：4

共 16 条

[1]

[Anonymous], 2015, DEVICE RES C CONF DI, DOI DOI 10.1109/DRC.2015.7175542

[2]

[Anonymous], 2013, P INT S VLSI TECHN S, DOI DOI 10.1109/VLSITSA.2013.6545648

[3] Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature [J].

Appleby, Daniel J. R. ;

Ponon, Nikhil K. ;

Kwa, Kelvin S. K. ;

Zou, Bin ;

Petrov, Peter K. ;

Wang, Tianle ;

Alford, Neil M. ;

O'Neill, Anthony .

NANO LETTERS, 2014, 14 (07) :3864-3868

[4] Depolarizing field and "real" hysteresis loops in nanometer-scale ferroelectric films [J].

Bratkovsky, A. M. ;

Levanyuk, A. P. .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[5] Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors [J].

Cano, A. ;

Jimenez, D. .

APPLIED PHYSICS LETTERS, 2010, 97 (13)

[6]

Chauhan Y.S., 2015, FINFET MODELING IC S

[7] Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-κ Gate Dielectric [J].

Cheng, Chun Hu ;

Chin, Albert .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (02) :274-276

[8] Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs [J].

Dasgupta, S. ;

Rajashekhar, A. ;

Majumdar, K. ;

Agrawal, N. ;

Razavieh, A. ;

Trolier-Mckinstry, S. ;

Datta, S. .

IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2015, 1 :43-48

[9] Room-Temperature Negative Capacitance in a Ferroelectric Dielectric Super lattice Heterostructure [J].

Gao, Weiwei ;

Khan, Asif ;

Marti, Xavi ;

Nelson, Chris ;

Serrao, Claudy ;

Ravichandran, Jayakanth ;

Ramesh, Ramamoorthy ;

Salahuddin, Sayeef .

NANO LETTERS, 2014, 14 (10) :5814-5819

[10] Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices [J].

Jo, Jaesung ;

Choi, Woo Young ;

Park, Jung-Dong ;

Shim, Jae Won ;

Yu, Hyun-Yong ;

Shin, Changhwan .

NANO LETTERS, 2015, 15 (07) :4553-4556

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