Structural and optical properties of Ga2(1-x)In2xO3 films prepared on α-Al2O3 (0001) by MOCVD

被引：29

作者：

Yang, Fan ^{[1
]}

Ma, Jin ^{[1
]}

Luan, Caina ^{[1
]}

Kong, Lingyi ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 08期

关键词：

Ga2(1-x)In2xO3 films; Microstructure; Optical properties; MOCVD; CONDUCTIVITY; OXIDE;

D O I：

10.1016/j.apsusc.2008.10.129

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ga2(1-x)In2xO3 thin films with different indium content x[In/(Ga+In) atomic ratio] were prepared on alpha-Al2O3 (0 0 0 1) substrates by the metal organic chemical vapor deposition (MOCVD). The structural and optical properties of the Ga2(1-x)In2xO3 films were investigated in detail. Microstructure analysis revealed that the film deposited with composition x = 0.2 was polycrystalline structure and the sample prepared with x up to 0.8 exhibited single crystalline structure of In2O3. The optical band gap of the films varied with increasing Ga content from 3.72 to 4.58 eV. The average transmittance for the films in the visible range was over 90%. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：4401 / 4404

页数：4

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