Large longitudinal electric fields (Ez) in silicon nanowire waveguides

被引：61

作者：

Driscoll, Jeffrey B. ^{[1
]}

Liu, Xiaoping ^{[1
]}

Yasseri, Saam ^{[1
]}

Hsieh, Iwei ^{[1
]}

Dadap, Jerry I. ^{[1
]}

Osgood, Richard M., Jr. ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

OPTICS EXPRESS | 2009年 / 17卷 / 04期

基金：

美国国家科学基金会;

关键词：

DISPERSION; PHASE; LIGHT;

D O I：

10.1364/OE.17.002797

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate the presence of strong longitudinal electric fields (E-z) in silicon nanowire waveguides through numerical computation. These waveguide fields can be engineered through choice of waveguide geometry to exhibit amplitudes as high as 97% that of the dominant transverse field component. We show even larger longitudinal fields created in free space by a terminated waveguide can become the dominant electric field component, and demonstrate Ez has a large effect on waveguide nonlinearity. We discuss the possibility of controlling the strength and symmetry of Ez using a dual waveguide design, and show that the resulting longitudinal field is sharply peaked beyond the diffraction limit. (C) 2009 Optical Society of America

引用

页码：2797 / 2804

页数：8

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