Silicon-based light emission after ion implantation

被引：2

作者：

Kittler, M ^{[1
]}

Arguirov, T ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] IHP Microelect, D-15236 Frankfurt, Germany

来源：

OPTOELECTRONIC INTEGRATION ON SILICON | 2004年 / 5357卷

关键词：

photoluminescence; electroluminescence; light emission; silicon; ion implantation; defects; gettering;

D O I：

10.1117/12.553871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence and electroluminescence of boron and phosphorus implanted silicon have been studied as a function of temperature. Phosphorus implantation is found to have a similar effect on light emission as boron implantation. An increase of the band-to-band luminescence intensity by one order of magnitude is observed upon rising the temperature from 80 K to 300 K. Defect luminescence arising from the implanted layer is found only at low temperatures. The remarkable band-to-band luminescence is attributed to a high Shockley-Read-Hall lifetime caused by the gettering action of implantation defects.

引用

页码：164 / 171

页数：8

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