Silicon-based light emission after ion implantation

被引：2
|
作者：
Kittler, M [1 ]
Arguirov, T [1 ]
Seifert, W [1 ]
机构：
[1] IHP Microelect, D-15236 Frankfurt, Germany
来源：
OPTOELECTRONIC INTEGRATION ON SILICON | 2004年 / 5357卷
关键词：
photoluminescence; electroluminescence; light emission; silicon; ion implantation; defects; gettering;
D O I：
10.1117/12.553871
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence and electroluminescence of boron and phosphorus implanted silicon have been studied as a function of temperature. Phosphorus implantation is found to have a similar effect on light emission as boron implantation. An increase of the band-to-band luminescence intensity by one order of magnitude is observed upon rising the temperature from 80 K to 300 K. Defect luminescence arising from the implanted layer is found only at low temperatures. The remarkable band-to-band luminescence is attributed to a high Shockley-Read-Hall lifetime caused by the gettering action of implantation defects.
引用
收藏
页码：164 / 171
页数：8
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