Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures

被引:106
作者
Nagarajan, V. [1 ]
Junquera, J.
He, J. Q.
Jia, C. L.
Waser, R.
Lee, K.
Kim, Y. K.
Baik, S.
Zhao, T.
Ramesh, R.
Ghosez, Ph.
Rabe, K. M.
机构
[1] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Univ Cantabria, Dept Ciencias Tierra & Fis Mat Condensada, E-39005 Santander, Spain
[3] Forschungszentrum Julich, IFF, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany
[4] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
[5] Univ Calif Berkeley, Dept Mat Sci, Berkeley, CA 94720 USA
[6] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[7] Univ Liege, Dept Phys, B-4000 Sart Tilman Par Liege, Belgium
[8] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
关键词
D O I
10.1063/1.2337363
中图分类号
O59 [应用物理学];
学科分类号
摘要
Scaling of the structural order parameter, polarization, and electrical properties was investigated in model ultrathin epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3/SrTiO3 heterostructures. High-resolution transmission electron microscopy images revealed the interfaces to be sharp and fully coherent. Synchrotron x-ray studies show that a high tetragonality (c/a similar to 1.058) is maintained down to 50 angstrom thick films, suggesting indirectly that ferroelectricity is fully preserved at such small thicknesses. However, measurement of the switchable polarization (Delta P) using a pulsed probe setup and the out-of-plane piezoelectric response (d(33)) revealed a systematic drop from similar to 140 mu C/cm(2) and 60 pm/V for a 150 angstrom thick film to 11 mu C/cm(2) and 7 pm/V for a 50 angstrom thick film. This apparent contradiction between the structural measurements and the measured switchable polarization is explained by an increasing presence of a strong depolarization field, which creates a pinned 180 degrees polydomain state for the thinnest films. Existence of a polydomain state is demonstrated by piezoresponse force microscopy images of the ultrathin films. These results suggest that the limit for a ferroelectric memory device may be much larger than the fundamental limit for ferroelectricity. (c) 2006 American Institute of Physics.
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页数:10
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