A 2.8-W Q-band high-efficiency power amplifier

被引：10

作者：

Aust, Michael V. ^{[1
]}

Sharma, Arvind K. ^{[1
]}

Fordham, Owen ^{[1
]}

Grundbacher, Ronald ^{[1
]}

To, Richard ^{[1
]}

Tsai, Roger S. ^{[1
]}

Lai, Richard ^{[1
]}

机构：

[1] Northrop Grumman, Adv Technol Dept, MMIC Design Teams, Redondo Beach, CA 90278 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2006年 / 41卷 / 10期

关键词：

HEMT; millimeter wave amplifier; MMIC power amplifier; MODFET; power combining;

D O I：

10.1109/JSSC.2006.878102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly efficient and high-power monolithic power amplifier operating at Q-band is presented utilizing 0.15-mu m pseudomorphic InGaAs/GaAs HEMT production process on 2-mil-thick substrate. Over 42-46 GHz frequency range, the amplifier demonstrated maximum power of 2.8 W (34.5 dBm) and power-added efficiency (PAE) of 23% to 26% when operated at 5 V and 250 mA/mm. The amplifier attained maximum PAE of 24% to 29% and power of 33.6-34 dBm when biased at 5 V and 125 mA/mm. At these power levels and PAEs, the amplifier exhibited power densities in excess of 430 mW/mm. With device periphery ratio of 1:2.857, effective phase compensation of the input feed network, and low-loss output-combining network, the power amplifier has been able to attain state-of-the-art efficiency and power performance.

引用

页码：2241 / 2247

页数：7

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