10 Gbit/s modulation of 1.3μm GaInNAs lasers up to 110°C

被引：31
作者：
Gustavsson, J. S. [1 ]
Wei, Y. Q. [1 ]
Sadeghi, M. [1 ]
Wang, S. M. [1 ]
Larsson, A. [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 16期
关键词：
D O I：
10.1049/el:20061517
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Uncooled 10 Gbit/s operation of high-To ridge waveguide 1.3 mu m GaInNAs lasers at ambient temperatures as high as 110 degrees C is demonstrated. The low temperature sensitivity enables use of a constant modulation voltage to obtain clear open eyes with an extinction ratio exceeding 5 dB.
引用
收藏
页码：925 / 926
页数：2
相关论文
共 9 条
  • [1] Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications
    Dagens, B
    Martinez, A
    Make, D
    Le Gouezigou, W
    Provost, JG
    Sallet, V
    Merghem, K
    Harmand, JC
    Ramdane, A
    Thedrez, B
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) : 971 - 973
  • [2] A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
    Fehse, R
    Tomic, S
    Adams, AR
    Sweeney, SJ
    O'Reilly, EP
    Andreev, A
    Riechert, H
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) : 801 - 810
  • [3] GaInNAs: A novel material for long-wavelength semiconductor lasers
    Kondow, M
    Kitatani, T
    Nakatsuka, S
    Larson, MC
    Nakahara, K
    Yazawa, Y
    Okai, M
    Uomi, K
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) : 719 - 730
  • [4] Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing
    Paoletti, R
    Agresti, M
    Bertone, D
    Bianco, L
    Bruschi, C
    Buccieri, A
    Campi, R
    Dorigoni, C
    Gotta, P
    Liotti, M
    Magnetti, G
    Montangero, P
    Morello, G
    Rigo, C
    Riva, E
    Rossi, G
    Soderstrom, D
    Stano, A
    Valenti, P
    Vallone, M
    Meliga, M
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (01) : 143 - 149
  • [5] The role of hole leakage in 1300-nm InGaAsN quantum-well lasers
    Tansu, N
    Mawst, LJ
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (10) : 1500 - 1502
  • [6] Very low threshold current density 1.3 μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy
    Wang, SM
    Wei, YQ
    Wang, XD
    Zhao, Q
    Sadeghi, M
    Larsson, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 734 - 738
  • [7] High-frequency modulation and bandwidth limitations of GaInNAs double-quantum-well lasers -: art. no. 051103
    Wei, YQ
    Gustavsson, JS
    Haglund, Å
    Modh, P
    Sadeghi, M
    Wang, SM
    Larsson, A
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (05) : 1 - 3
  • [8] Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range
    Wei, YQ
    Gustavsson, JS
    Sadeghi, M
    Wang, SM
    Larsson, A
    [J]. OPTICS EXPRESS, 2006, 14 (07): : 2753 - 2759
  • [9] High performance 1.28 μm GaLnNAs double quantum well lasers
    Wei, YQ
    Sadeghi, M
    Wang, SM
    Modh, P
    Larsson, A
    [J]. ELECTRONICS LETTERS, 2005, 41 (24) : 1328 - 1330
1