The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si plus Er target

被引：5

作者：

Ha, JS ^{[1
]}

Sung, GY

Lee, S

Jang, YR

Yoo, KH

Bae, CH

Jeon, JS

Nam, SH

Park, SM

机构：

[1] Korea Univ, Dept Biol & Chem Engn, Seoul 136701, South Korea

[2] Elect & Telecommun Res Inst, Basic Res Lab, Taejon, South Korea

[3] Kyung Hee Univ, Dept Phys, Seoul, South Korea

[4] Kyung Hee Univ, Dept Chem, Seoul, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 4-6期

关键词：

D O I：

10.1007/s00339-004-2826-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated Er-doped silicon-rich silicon oxide (SRSO:Er) films by pulsed laser deposition. A Si+Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 mum is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500 degreesC.

引用

页码：1485 / 1488

页数：4

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