The effect of GaAs(100) surface preparation on the growth of nanowires

被引:23
作者
Ghosh, S. C. [1 ,2 ]
Kruse, P. [1 ,3 ]
LaPierre, R. R. [1 ,2 ]
机构
[1] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada
[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[3] McMaster Univ, Dept Chem, Hamilton, ON L8S 4M1, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
DESORPTION; DIRECTION;
D O I
10.1088/0957-4484/20/11/115602
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The influence of GaAs(100) substrate surface preparation on Au-catalysed GaAs nanowires was studied. Elongated pits of varying dimensions and orientation were formed on GaAs(100) substrates depending on the interaction with Au and surface oxides. The resulting surface topography is shown to influence the density and orientation of nanowires. < 111 > B-oriented nanowires nucleated from Au particles lying on the sidewall facets of the pits, while < 011 >-oriented nanowires nucleated from Au particles lying outside the pits.
引用
收藏
页数:7
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