Low-frequency noise in mid-wavelength infrared InAs/GaSb type-II superlattice based focal plane arrays

被引：7

作者：

Razeghi, M. ^{[1
]}

Haddadi, A. ^{[1
]}

Chen, G. ^{[1
]}

Hoang, A. M. ^{[1
]}

Chevallier, R. ^{[1
]}

Callewaert, F. ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Elect Engn & Comp Sci Dept, Evanston, IL 60208 USA

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XL | 2014年 / 9070卷

关键词：

InAs/GaSb/AlSb type-II superlattice; infrared imaging; focal plane array; mid-wavelength infrared; high operating temperature infrared photodetector; photodetector; noise; low-frequency noise; 1/F NOISE;

D O I：

10.1117/12.2057505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-frequency noise has been studied in a mid-wavelength infrared InAs/GaSb type-II superlattice-based focal plane array. Low-frequency noise is observed under reverse bias but not at zero bias, even in the presence of photo-current. The magnitude of low-frequency noise was separately measured as a function of operating temperature and operation bias. The low-frequency noise is linearly correlated with the generation-recombination component of the dark current. No correlation of low-frequency noise with photo-current or diffusion dark current was found.

引用

页数：9

共 19 条

[1]

Chen G., 2011, Appl. Phys. Lett, V99, p183503

[2]

Cowan V. M., 2011, SPIE

[3] Substrate removal for high quantum efficiency back side illuminated type-II InAs/GaSb photodetectors [J].