Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 degrees C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)