Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

被引：2
|
作者：
Zheng, Zhi-Wei [1 ]
Hsu, Hsiao-Hsuan [2 ]
Cheng, Chun-Hu [2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 10610, Taiwan
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 01期
关键词：
resistive random access memory; RRAM; GeO2; TiO2; SWITCHING MEMORIES; NONVOLATILE MEMORY; OXIDES; FILMS;
D O I：
10.1002/pssr.201308143
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma-modified electrode. The low sub-mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high-temperature current distribution at 125 degrees C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta-N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high-temperature current distribution. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：100 / 104
页数：5
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