A Ka-band VCO with low phase noise and wide tuning range using a 90-nm dual-gate device

被引：1
|
作者：
Chou, Min-Li [1 ]
Chiu, Hsien-Chin [1 ]
Huang, Fan-Hsiu [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan, Taiwan
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2016年 / 58卷 / 03期
关键词：
dual-gate; flicker noise; cross-coupled; voltage-controlled oscillator; low phase noise; wide tuning range; DISTRIBUTED-AMPLIFIERS; TRANSFORMER FEEDBACK; CMOS; OSCILLATOR; DRAIN;
D O I：
10.1002/mop.29605
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and characterization of a K-a-band 90-nm CMOS voltage-controlled oscillator (VCO) with low phase noise and a wide tuning range is presented in this latter. In this work, the flicker noise (1/f) performance of single- and dual-gate devices is measured and compared. By using the proposed dual-gate device, the VCO design can improve the oscillator phase-noise performance owing to its high output resistance. The measurement results also show a wide frequency tuning range of 3.1 GHz and a low phase noise of below -95 dBc/Hz at an offset frequency of 1 MHz, under a supply voltage of 1.2 V, and a current consumption of 11.0 mA. The proposed VCO exhibits a figure-of-merit of -180 dBc/Hz. (c) 2016 Wiley Periodicals, Inc.
引用
收藏
页码：502 / 505
页数：4
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