A Ka-band VCO with low phase noise and wide tuning range using a 90-nm dual-gate device

被引：1

作者：

Chou, Min-Li ^{[1
]}

Chiu, Hsien-Chin ^{[1
]}

Huang, Fan-Hsiu ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Taoyuan, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2016年 / 58卷 / 03期

关键词：

dual-gate; flicker noise; cross-coupled; voltage-controlled oscillator; low phase noise; wide tuning range; DISTRIBUTED-AMPLIFIERS; TRANSFORMER FEEDBACK; CMOS; OSCILLATOR; DRAIN;

D O I：

10.1002/mop.29605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and characterization of a K-a-band 90-nm CMOS voltage-controlled oscillator (VCO) with low phase noise and a wide tuning range is presented in this latter. In this work, the flicker noise (1/f) performance of single- and dual-gate devices is measured and compared. By using the proposed dual-gate device, the VCO design can improve the oscillator phase-noise performance owing to its high output resistance. The measurement results also show a wide frequency tuning range of 3.1 GHz and a low phase noise of below -95 dBc/Hz at an offset frequency of 1 MHz, under a supply voltage of 1.2 V, and a current consumption of 11.0 mA. The proposed VCO exhibits a figure-of-merit of -180 dBc/Hz. (c) 2016 Wiley Periodicals, Inc.

引用

页码：502 / 505

页数：4

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