Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells

被引：10
作者：
Wongmanerod, S [1 ]
Sernelius, BE
Holtz, PO
Monemar, B
Mauritz, O
Reginski, K
Bugajski, M
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Royal Inst Technol, Dept Phys, S-10044 Stockholm, Sweden
[3] Inst Electron Technol, PL-02668 Warsaw, Poland
来源：
PHYSICAL REVIEW B | 2000年 / 61卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.61.2794
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Many-body effects have been optically investigated for modulation-doped quantum wells at high acceptor densities. The observed band-gap shrinkage, up to approximate to 20 meV, is consistent with calculations based on the Hartree and random-phase approximations including the finite well width effect. A recombination near the Fermi edge with light-hole character is strikingly enhanced at high acceptor densities. An interpretation based on carrier-carrier interaction is proposed. Finally, the exciton is found to be quenched for hole densities higher than approximate to 2x10(12) cm(-2).
引用
收藏
页码：2794 / 2798
页数：5
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