The crystallization and dielectric tunability of Zn doped Na0.5Bi0.5TiO3 thin films

被引:8
作者
Qian, Jin [1 ]
Yang, Changhong [1 ,2 ]
Han, Yajie [1 ]
Hu, Xueqing [1 ]
Li, Shuxin [1 ]
Jiao, Fangying [1 ]
Du, Xiongbin [1 ]
机构
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China
[2] Univ Jinan, Shandong Prov Key Lab Preparat & Measurement Bldg, Jinan 250022, Peoples R China
基金
中国国家自然科学基金;
关键词
Films; Surfaces; Dielectric properties; Crystallization;
D O I
10.1016/j.ceramint.2015.08.110
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Na0.5Bi0.5Ti1-xZnxO3-delta (NBTZnx, x=0.005-0.04) thin films were deposited on indium tin oxide coated glass substrates by metal organic decomposition combined with sequential layer annealing. The effects of Zn2+ doping content on crystallization and dielectric tunability were mainly studied. All the thin films crystallize into a single perovskite structure with random orientation. Compared with the other films, the NBTZn0.01 film exhibits a high dielectric constant and strong nonlinear dependence of the dielectric constant on applied field due to its well-crystallization and high densification. Furthermore, the effects of the electric field and frequency on the dielectric constant-electric field characteristic for NBTZn0.01 film are discussed. The results show that NBTZn0.01 thin film with an enhanced dielectric tunability of 39% can be a lead-free candidate for tunable component. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:976 / 981
页数:6
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